A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor

Costa, Diego - Míguez, Matías - Gak Szollosy, Joel - Arnaud Maceira, Alfredo

Resumen:

In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.


Detalles Bibliográficos
2020
Agencia Nacional de Investigación e Innovación
Circuitos integrados
Topología
Transistores
Estándares
Espejos de corriente
Inglés
Universidad Católica del Uruguay
LIBERI
https://hdl.handle.net/10895/1786
Acceso abierto
_version_ 1815178683969699840
author Costa, Diego
author2 Míguez, Matías
Gak Szollosy, Joel
Arnaud Maceira, Alfredo
author2_role author
author
author
author_facet Costa, Diego
Míguez, Matías
Gak Szollosy, Joel
Arnaud Maceira, Alfredo
author_role author
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collection LIBERI
dc.creator.none.fl_str_mv Costa, Diego
Míguez, Matías
Gak Szollosy, Joel
Arnaud Maceira, Alfredo
dc.date.accessioned.none.fl_str_mv 2022-09-01T21:52:03Z
dc.date.available.none.fl_str_mv 2022-09-01T21:52:03Z
dc.date.issued.none.fl_str_mv 2020
dc.description.abstract.none.fl_txt_mv In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.
dc.description.sponsorship.none.fl_txt_mv Agencia Nacional de Investigación e Innovación
dc.format.mimetype.none.fl_str_mv application/pdf
dc.identifier.uri.none.fl_str_mv https://hdl.handle.net/10895/1786
dc.language.iso.none.fl_str_mv eng
dc.publisher.es.fl_str_mv IEEE
dc.relation.ispartof.es.fl_str_mv Argentine Conference on Electronics (CAE), 2020
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
dc.source.none.fl_str_mv reponame:LIBERI
instname:Universidad Católica del Uruguay
instacron:Universidad Católica del Uruguay
dc.subject.es.fl_str_mv Circuitos integrados
Topología
Transistores
Estándares
Espejos de corriente
dc.title.none.fl_str_mv A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor
dc.type.es.fl_str_mv Artículo
dc.type.none.fl_str_mv info:eu-repo/semantics/article
dc.type.version.none.fl_str_mv info:eu-repo/semantics/publishedVersion
description In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.
eu_rights_str_mv openAccess
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institution Universidad Católica del Uruguay
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language eng
network_acronym_str LIBERI
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oai_identifier_str oai:liberi.ucu.edu.uy:10895/1786
publishDate 2020
reponame_str LIBERI
repository.mail.fl_str_mv franco.pertusso@ucu.edu.uy
repository.name.fl_str_mv LIBERI - Universidad Católica del Uruguay
repository_id_str 10342
spelling 2022-09-01T21:52:03Z2022-09-01T21:52:03Z2020https://hdl.handle.net/10895/1786In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.Agencia Nacional de Investigación e Innovaciónapplication/pdfIEEEArgentine Conference on Electronics (CAE), 2020Circuitos integradosTopologíaTransistoresEstándaresEspejos de corrienteA Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite TransistorArtículoinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionreponame:LIBERIinstname:Universidad Católica del Uruguayinstacron:Universidad Católica del UruguayCosta, DiegoMíguez, MatíasGak Szollosy, JoelArnaud Maceira, Alfredoenginfo:eu-repo/semantics/openAccessORIGINALA_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdfA_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdfapplication/pdf1044828http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1786/1/A_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf01ee40b14f10335cd901ef329eb9db07MD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81748http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1786/2/license.txt8a4605be74aa9ea9d79846c1fba20a33MD52TEXTA_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf.txtA_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf.txtExtracted texttext/plain18751http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1786/3/A_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf.txtaa959d41ef2e040b324ee15ec3d8b2efMD53THUMBNAILA_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf.jpgA_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf.jpgGenerated Thumbnailimage/jpeg7294http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1786/4/A_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf.jpgb66e48e98f2249331acf0f7c4dedf82fMD5410895/17862022-09-04 00:01:21.138oai:liberi.ucu.edu.uy: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Universidadhttps://www.ucu.edu.uy/https://liberi.ucu.edu.uy/oai/requestfranco.pertusso@ucu.edu.uyUruguayopendoar:103422022-09-04T03:01:21LIBERI - Universidad Católica del Uruguayfalse
spellingShingle A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor
Costa, Diego
Circuitos integrados
Topología
Transistores
Estándares
Espejos de corriente
status_str publishedVersion
title A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor
title_full A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor
title_fullStr A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor
title_full_unstemmed A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor
title_short A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor
title_sort A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor
topic Circuitos integrados
Topología
Transistores
Estándares
Espejos de corriente
url https://hdl.handle.net/10895/1786