A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor
Resumen:
In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.
2020 | |
Agencia Nacional de Investigación e Innovación | |
Circuitos integrados Topología Transistores Estándares Espejos de corriente |
|
Inglés | |
Universidad Católica del Uruguay | |
LIBERI | |
https://hdl.handle.net/10895/1786 | |
Acceso abierto |
_version_ | 1815178683969699840 |
---|---|
author | Costa, Diego |
author2 | Míguez, Matías Gak Szollosy, Joel Arnaud Maceira, Alfredo |
author2_role | author author author |
author_facet | Costa, Diego Míguez, Matías Gak Szollosy, Joel Arnaud Maceira, Alfredo |
author_role | author |
bitstream.checksum.fl_str_mv | 01ee40b14f10335cd901ef329eb9db07 8a4605be74aa9ea9d79846c1fba20a33 aa959d41ef2e040b324ee15ec3d8b2ef b66e48e98f2249331acf0f7c4dedf82f |
bitstream.checksumAlgorithm.fl_str_mv | MD5 MD5 MD5 MD5 |
bitstream.url.fl_str_mv | http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1786/1/A_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1786/2/license.txt http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1786/3/A_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf.txt http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1786/4/A_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf.jpg |
collection | LIBERI |
dc.creator.none.fl_str_mv | Costa, Diego Míguez, Matías Gak Szollosy, Joel Arnaud Maceira, Alfredo |
dc.date.accessioned.none.fl_str_mv | 2022-09-01T21:52:03Z |
dc.date.available.none.fl_str_mv | 2022-09-01T21:52:03Z |
dc.date.issued.none.fl_str_mv | 2020 |
dc.description.abstract.none.fl_txt_mv | In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references. |
dc.description.sponsorship.none.fl_txt_mv | Agencia Nacional de Investigación e Innovación |
dc.format.mimetype.none.fl_str_mv | application/pdf |
dc.identifier.uri.none.fl_str_mv | https://hdl.handle.net/10895/1786 |
dc.language.iso.none.fl_str_mv | eng |
dc.publisher.es.fl_str_mv | IEEE |
dc.relation.ispartof.es.fl_str_mv | Argentine Conference on Electronics (CAE), 2020 |
dc.rights.none.fl_str_mv | info:eu-repo/semantics/openAccess |
dc.source.none.fl_str_mv | reponame:LIBERI instname:Universidad Católica del Uruguay instacron:Universidad Católica del Uruguay |
dc.subject.es.fl_str_mv | Circuitos integrados Topología Transistores Estándares Espejos de corriente |
dc.title.none.fl_str_mv | A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor |
dc.type.es.fl_str_mv | Artículo |
dc.type.none.fl_str_mv | info:eu-repo/semantics/article |
dc.type.version.none.fl_str_mv | info:eu-repo/semantics/publishedVersion |
description | In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references. |
eu_rights_str_mv | openAccess |
format | article |
id | LIBERI_c48502fa38e9ee626054b4a38ae9d3ad |
instacron_str | Universidad Católica del Uruguay |
institution | Universidad Católica del Uruguay |
instname_str | Universidad Católica del Uruguay |
language | eng |
network_acronym_str | LIBERI |
network_name_str | LIBERI |
oai_identifier_str | oai:liberi.ucu.edu.uy:10895/1786 |
publishDate | 2020 |
reponame_str | LIBERI |
repository.mail.fl_str_mv | franco.pertusso@ucu.edu.uy |
repository.name.fl_str_mv | LIBERI - Universidad Católica del Uruguay |
repository_id_str | 10342 |
spelling | 2022-09-01T21:52:03Z2022-09-01T21:52:03Z2020https://hdl.handle.net/10895/1786In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.Agencia Nacional de Investigación e Innovaciónapplication/pdfIEEEArgentine Conference on Electronics (CAE), 2020Circuitos integradosTopologíaTransistoresEstándaresEspejos de corrienteA Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite TransistorArtículoinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionreponame:LIBERIinstname:Universidad Católica del Uruguayinstacron:Universidad Católica del UruguayCosta, DiegoMíguez, MatíasGak Szollosy, JoelArnaud Maceira, Alfredoenginfo:eu-repo/semantics/openAccessORIGINALA_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdfA_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdfapplication/pdf1044828http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1786/1/A_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf01ee40b14f10335cd901ef329eb9db07MD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81748http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1786/2/license.txt8a4605be74aa9ea9d79846c1fba20a33MD52TEXTA_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf.txtA_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf.txtExtracted texttext/plain18751http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1786/3/A_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf.txtaa959d41ef2e040b324ee15ec3d8b2efMD53THUMBNAILA_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf.jpgA_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf.jpgGenerated Thumbnailimage/jpeg7294http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1786/4/A_Self-biased_Current_Source_using_an_Asymmetric_Bulk-modified_MOS_Composite_Transistor.pdf.jpgb66e48e98f2249331acf0f7c4dedf82fMD5410895/17862022-09-04 00:01:21.138oai:liberi.ucu.edu.uy:10895/1786Tk9URTogUExBQ0UgWU9VUiBPV04gTElDRU5TRSBIRVJFClRoaXMgc2FtcGxlIGxpY2Vuc2UgaXMgcHJvdmlkZWQgZm9yIGluZm9ybWF0aW9uYWwgcHVycG9zZXMgb25seS4KCk5PTi1FWENMVVNJVkUgRElTVFJJQlVUSU9OIExJQ0VOU0UKCkJ5IHNpZ25pbmcgYW5kIHN1Ym1pdHRpbmcgdGhpcyBsaWNlbnNlLCB5b3UgKHRoZSBhdXRob3Iocykgb3IgY29weXJpZ2h0Cm93bmVyKSBncmFudHMgdG8gRFNwYWNlIFVuaXZlcnNpdHkgKERTVSkgdGhlIG5vbi1leGNsdXNpdmUgcmlnaHQgdG8gcmVwcm9kdWNlLAp0cmFuc2xhdGUgKGFzIGRlZmluZWQgYmVsb3cpLCBhbmQvb3IgZGlzdHJpYnV0ZSB5b3VyIHN1Ym1pc3Npb24gKGluY2x1ZGluZwp0aGUgYWJzdHJhY3QpIHdvcmxkd2lkZSBpbiBwcmludCBhbmQgZWxlY3Ryb25pYyBmb3JtYXQgYW5kIGluIGFueSBtZWRpdW0sCmluY2x1ZGluZyBidXQgbm90IGxpbWl0ZWQgdG8gYXVkaW8gb3IgdmlkZW8uCgpZb3UgYWdyZWUgdGhhdCBEU1UgbWF5LCB3aXRob3V0IGNoYW5naW5nIHRoZSBjb250ZW50LCB0cmFuc2xhdGUgdGhlCnN1Ym1pc3Npb24gdG8gYW55IG1lZGl1bSBvciBmb3JtYXQgZm9yIHRoZSBwdXJwb3NlIG9mIHByZXNlcnZhdGlvbi4KCllvdSBhbHNvIGFncmVlIHRoYXQgRFNVIG1heSBrZWVwIG1vcmUgdGhhbiBvbmUgY29weSBvZiB0aGlzIHN1Ym1pc3Npb24gZm9yCnB1cnBvc2VzIG9mIHNlY3VyaXR5LCBiYWNrLXVwIGFuZCBwcmVzZXJ2YXRpb24uCgpZb3UgcmVwcmVzZW50IHRoYXQgdGhlIHN1Ym1pc3Npb24gaXMgeW91ciBvcmlnaW5hbCB3b3JrLCBhbmQgdGhhdCB5b3UgaGF2ZQp0aGUgcmlnaHQgdG8gZ3JhbnQgdGhlIHJpZ2h0cyBjb250YWluZWQgaW4gdGhpcyBsaWNlbnNlLiBZb3UgYWxzbyByZXByZXNlbnQKdGhhdCB5b3VyIHN1Ym1pc3Npb24gZG9lcyBub3QsIHRvIHRoZSBiZXN0IG9mIHlvdXIga25vd2xlZGdlLCBpbmZyaW5nZSB1cG9uCmFueW9uZSdzIGNvcHlyaWdodC4KCklmIHRoZSBzdWJtaXNzaW9uIGNvbnRhaW5zIG1hdGVyaWFsIGZvciB3aGljaCB5b3UgZG8gbm90IGhvbGQgY29weXJpZ2h0LAp5b3UgcmVwcmVzZW50IHRoYXQgeW91IGhhdmUgb2J0YWluZWQgdGhlIHVucmVzdHJpY3RlZCBwZXJtaXNzaW9uIG9mIHRoZQpjb3B5cmlnaHQgb3duZXIgdG8gZ3JhbnQgRFNVIHRoZSByaWdodHMgcmVxdWlyZWQgYnkgdGhpcyBsaWNlbnNlLCBhbmQgdGhhdApzdWNoIHRoaXJkLXBhcnR5IG93bmVkIG1hdGVyaWFsIGlzIGNsZWFybHkgaWRlbnRpZmllZCBhbmQgYWNrbm93bGVkZ2VkCndpdGhpbiB0aGUgdGV4dCBvciBjb250ZW50IG9mIHRoZSBzdWJtaXNzaW9uLgoKSUYgVEhFIFNVQk1JU1NJT04gSVMgQkFTRUQgVVBPTiBXT1JLIFRIQVQgSEFTIEJFRU4gU1BPTlNPUkVEIE9SIFNVUFBPUlRFRApCWSBBTiBBR0VOQ1kgT1IgT1JHQU5JWkFUSU9OIE9USEVSIFRIQU4gRFNVLCBZT1UgUkVQUkVTRU5UIFRIQVQgWU9VIEhBVkUKRlVMRklMTEVEIEFOWSBSSUdIVCBPRiBSRVZJRVcgT1IgT1RIRVIgT0JMSUdBVElPTlMgUkVRVUlSRUQgQlkgU1VDSApDT05UUkFDVCBPUiBBR1JFRU1FTlQuCgpEU1Ugd2lsbCBjbGVhcmx5IGlkZW50aWZ5IHlvdXIgbmFtZShzKSBhcyB0aGUgYXV0aG9yKHMpIG9yIG93bmVyKHMpIG9mIHRoZQpzdWJtaXNzaW9uLCBhbmQgd2lsbCBub3QgbWFrZSBhbnkgYWx0ZXJhdGlvbiwgb3RoZXIgdGhhbiBhcyBhbGxvd2VkIGJ5IHRoaXMKbGljZW5zZSwgdG8geW91ciBzdWJtaXNzaW9uLgo=Universidadhttps://www.ucu.edu.uy/https://liberi.ucu.edu.uy/oai/requestfranco.pertusso@ucu.edu.uyUruguayopendoar:103422022-09-04T03:01:21LIBERI - Universidad Católica del Uruguayfalse |
spellingShingle | A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor Costa, Diego Circuitos integrados Topología Transistores Estándares Espejos de corriente |
status_str | publishedVersion |
title | A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor |
title_full | A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor |
title_fullStr | A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor |
title_full_unstemmed | A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor |
title_short | A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor |
title_sort | A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor |
topic | Circuitos integrados Topología Transistores Estándares Espejos de corriente |
url | https://hdl.handle.net/10895/1786 |