A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor

 

Autor(es):

Costa, Diego ; Míguez, Matías ; Gak Szollosy, Joel ; Arnaud Maceira, Alfredo

Tipo:

Artículo

Versión:

Publicado

Financiadores:

Agencia Nacional de Investigación e Innovación

Resumen:

In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.

Año:

2020

Idioma:

Inglés

Temas:

Circuitos integrados
Topología
Transistores
Estándares
Espejos de corriente

Institución:

Universidad Católica del Uruguay

Repositorio:

Líberi

Enlace(s):

https://hdl.handle.net/10895/1786

Nivel de acceso:

Acceso abierto