A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor
Resumen:
In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.
| 2020 | |
| Agencia Nacional de Investigación e Innovación | |
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Circuitos integrados Topología Transistores Estándares Espejos de corriente |
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| Inglés | |
| Universidad Católica del Uruguay | |
| LIBERI | |
| https://hdl.handle.net/10895/1786 | |
| Acceso abierto |
| Sumario: | In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references. |
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