Variability-aware design method for a constant inversion level bias current generator
Resumen:
A model for estimating the dispersion in the output of a MOS-only, constant inversion level, current reference is presented. Based on such model, a design method is introduced that allows to optimize how area is spent in order to minimize the dispersion for a given layout complexity. The model was successfully compared with the measurements of a current source fabricated on a 130-nm CMOS technology and with the simulations of six other designs. The fabricated, ultralow power, current source has an area of 0.032 mm 2 and produces 11.4 nA on average, while all eight measured devices were inside ±2.1% of the average.
| 2019 | |
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Dispersion Semiconductor device modeling Generators MOSFET Design methodology Integrated circuit modeling Current references MOS transistors Mismatch ACM Temperature effects Constant inversion |
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| Inglés | |
| Universidad de la República | |
| COLIBRI | |
| https://hdl.handle.net/20.500.12008/23861 | |
| Acceso abierto | |
| Licencia Creative Commons Atribución - No Comercial - Sin Derivadas (CC - By-NC-ND 4.0) |
