Variability-aware design method for a constant inversion level bias current generator
- Autor(es):
- Antúnez, Guillermo ; Siniscalchi, Mariana ; Silveira, Fernando ; Rossi, Conrado
- Tipo:
- Preprint
- Versión:
- Enviado
- Resumen:
-
A model for estimating the dispersion in the output of a MOS-only, constant inversion level, current reference is presented. Based on such model, a design method is introduced that allows to optimize how area is spent in order to minimize the dispersion for a given layout complexity. The model was successfully compared with the measurements of a current source fabricated on a 130-nm CMOS technology and with the simulations of six other designs. The fabricated, ultralow power, current source has an area of 0.032 mm 2 and produces 11.4 nA on average, while all eight measured devices were inside ±2.1% of the average.
- Año:
- 2019
- Temas:
- Dispersion
Semiconductor device modeling
Generators
MOSFET
Design methodology
Integrated circuit modeling
Current references
MOS transistors
Mismatch
ACM
Temperature effects
Constant inversion
- Institución:
- Universidad de la República
- Repositorio:
- COLIBRI
- Enlace(s):
- https://hdl.handle.net/20.500.12008/23861
- Nivel de acceso:
- Acceso abierto
