MOSFET mismatch in weak/moderate inversion : model needs and implications for analog design
Resumen:
Based on mismatch measurements performed on very different CMOS technologies and large operating temperature range, we propose to model more adequately the mismatch in weak and moderate inversion by adding a new term related to the mismatch of the body effect factor dependence on the gate voltage. The model is introduced in a top-down analog design methodology, applied to the current mirror case, revealing some nonobvious design rules as well as typical misconceptions.
| 2003 | |
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MOSFET circuits Analog design Mismatch measurements ELECTRÓNICA |
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| Inglés | |
| Universidad de la República | |
| COLIBRI | |
| https://hdl.handle.net/20.500.12008/21263 | |
| Acceso abierto | |
| Licencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC - By-NC-ND) |
