Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory
Resumen:
This work presents an approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and valid for any operating region. Experimental results taken on a test set of transistors implemented in a 1.2 /spl mu/m CMOS technology corroborate the theoretical development of this work.
| 2004 | |
|
MOSFET Analog design Matching Compact models ELECTRÓNICA |
|
| Inglés | |
| Universidad de la República | |
| COLIBRI | |
| https://hdl.handle.net/20.500.12008/21286 | |
| Acceso abierto | |
| Licencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC - By-NC-ND) |
| _version_ | 1807522895364096000 |
|---|---|
| author | Klimach, H |
| author2 | Arnaud, Alfredo Schneider, M. C Galup Montoro, Carlos |
| author2_role | author author author |
| author_facet | Klimach, H Arnaud, Alfredo Schneider, M. C Galup Montoro, Carlos |
| author_role | author |
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| collection | COLIBRI |
| dc.creator.none.fl_str_mv | Klimach, H Arnaud, Alfredo Schneider, M. C Galup Montoro, Carlos |
| dc.date.accessioned.none.fl_str_mv | 2019-07-03T16:36:21Z |
| dc.date.available.none.fl_str_mv | 2019-07-03T16:36:21Z |
| dc.date.issued.es.fl_str_mv | 2004 |
| dc.date.submitted.es.fl_str_mv | 20190703 |
| dc.description.abstract.none.fl_txt_mv | This work presents an approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and valid for any operating region. Experimental results taken on a test set of transistors implemented in a 1.2 /spl mu/m CMOS technology corroborate the theoretical development of this work. |
| dc.description.es.fl_txt_mv | Postprint |
| dc.identifier.citation.es.fl_str_mv | Klimach, H., Arnaud, A., Schneider, M. C., Galup Montoro, C. Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory [en línea] IEEE International Symposium on Circuits and Systems, Vancouver, Canada, 2004. doi : 10.1109/ISCAS.2004.1329471 |
| dc.identifier.uri.none.fl_str_mv | https://hdl.handle.net/20.500.12008/21286 |
| dc.language.iso.none.fl_str_mv | en eng |
| dc.publisher.es.fl_str_mv | IEEE |
| dc.rights.license.none.fl_str_mv | Licencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC - By-NC-ND) |
| dc.rights.none.fl_str_mv | info:eu-repo/semantics/openAccess |
| dc.source.none.fl_str_mv | reponame:COLIBRI instname:Universidad de la República instacron:Universidad de la República |
| dc.subject.es.fl_str_mv | MOSFET Analog design Matching Compact models |
| dc.subject.other.es.fl_str_mv | ELECTRÓNICA |
| dc.title.none.fl_str_mv | Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory |
| dc.type.es.fl_str_mv | Artículo |
| dc.type.none.fl_str_mv | info:eu-repo/semantics/article |
| dc.type.version.none.fl_str_mv | info:eu-repo/semantics/publishedVersion |
| description | Postprint |
| eu_rights_str_mv | openAccess |
| format | article |
| id | COLIBRI_2d78cad0991a61920835675c33d7e5db |
| identifier_str_mv | Klimach, H., Arnaud, A., Schneider, M. C., Galup Montoro, C. Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory [en línea] IEEE International Symposium on Circuits and Systems, Vancouver, Canada, 2004. doi : 10.1109/ISCAS.2004.1329471 |
| instacron_str | Universidad de la República |
| institution | Universidad de la República |
| instname_str | Universidad de la República |
| language | eng |
| language_invalid_str_mv | en |
| network_acronym_str | COLIBRI |
| network_name_str | COLIBRI |
| oai_identifier_str | oai:colibri.udelar.edu.uy:20.500.12008/21286 |
| publishDate | 2004 |
| reponame_str | COLIBRI |
| repository.mail.fl_str_mv | mabel.seroubian@seciu.edu.uy |
| repository.name.fl_str_mv | COLIBRI - Universidad de la República |
| repository_id_str | 4771 |
| rights_invalid_str_mv | Licencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC - By-NC-ND) |
| spelling | 2019-07-03T16:36:21Z2019-07-03T16:36:21Z200420190703Klimach, H., Arnaud, A., Schneider, M. C., Galup Montoro, C. Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory [en línea] IEEE International Symposium on Circuits and Systems, Vancouver, Canada, 2004. doi : 10.1109/ISCAS.2004.1329471https://hdl.handle.net/20.500.12008/21286PostprintThis work presents an approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and valid for any operating region. Experimental results taken on a test set of transistors implemented in a 1.2 /spl mu/m CMOS technology corroborate the theoretical development of this work.Made available in DSpace on 2019-07-03T16:36:21Z (GMT). No. of bitstreams: 5 KASG04.pdf: 166967 bytes, checksum: f27997ea30fc36273f3d21079fc8c086 (MD5) license_text: 0 bytes, checksum: d41d8cd98f00b204e9800998ecf8427e (MD5) license_url: 49 bytes, checksum: 4afdbb8c545fd630ea7db775da747b2f (MD5) license_rdf: 0 bytes, checksum: d41d8cd98f00b204e9800998ecf8427e (MD5) license.txt: 4267 bytes, checksum: 6429389a7df7277b72b7924fdc7d47a9 (MD5) Previous issue date: 2004enengIEEELas obras depositadas en el Repositorio se rigen por la Ordenanza de los Derechos de la Propiedad Intelectual de la Universidad De La República. (Res. Nº 91 de C.D.C. de 8/III/1994 – D.O. 7/IV/1994) y por la Ordenanza del Repositorio Abierto de la Universidad de la República (Res. Nº 16 de C.D.C. de 07/10/2014)info:eu-repo/semantics/openAccessLicencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC - By-NC-ND)MOSFETAnalog designMatchingCompact modelsELECTRÓNICAConsistent model for drain current mismatch in mosfets using the carrier number fluctuation theoryArtículoinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionreponame:COLIBRIinstname:Universidad de la Repúblicainstacron:Universidad de la RepúblicaKlimach, HArnaud, AlfredoSchneider, M. 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- Universidad de la Repúblicafalse |
| spellingShingle | Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory Klimach, H MOSFET Analog design Matching Compact models ELECTRÓNICA |
| status_str | publishedVersion |
| title | Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory |
| title_full | Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory |
| title_fullStr | Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory |
| title_full_unstemmed | Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory |
| title_short | Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory |
| title_sort | Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory |
| topic | MOSFET Analog design Matching Compact models ELECTRÓNICA |
| url | https://hdl.handle.net/20.500.12008/21286 |
