Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory
- Autor(es):
- Klimach, H ; Arnaud, Alfredo ; Schneider, M. C ; Galup Montoro, Carlos
- Tipo:
- Artículo
- Versión:
- Publicado
- Resumen:
-
This work presents an approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and valid for any operating region. Experimental results taken on a test set of transistors implemented in a 1.2 /spl mu/m CMOS technology corroborate the theoretical development of this work.
- Año:
- 2004
- Idioma:
- Inglés
- Temas:
- MOSFET
Analog design
Matching
Compact models
ELECTRÓNICA
- Institución:
- Universidad de la República
- Repositorio:
- COLIBRI
- Enlace(s):
- https://hdl.handle.net/20.500.12008/21286
- Nivel de acceso:
- Acceso abierto
