Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory
Resumen:
This work presents an approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and valid for any operating region. Experimental results taken on a test set of transistors implemented in a 1.2 /spl mu/m CMOS technology corroborate the theoretical development of this work.
| 2004 | |
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MOSFET Analog design Matching Compact models ELECTRÓNICA |
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| Inglés | |
| Universidad de la República | |
| COLIBRI | |
| https://hdl.handle.net/20.500.12008/21286 | |
| Acceso abierto | |
| Licencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC - By-NC-ND) |
| Sumario: | Postprint |
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