Additive Manufacturing of Cupric Oxide via Direct Ink Writing
Fabricación aditiva de óxido cúprico mediante escritura directa con tinta
Fabricação aditiva de óxido cúprico por escrita direta de tinta
| 2026 | |
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Cerámica avanzada Impresión directa con tinta Fabricación aditiva Óxido de cobre Óxido cúprico Aglutinante Cerámica Cuerpo verde Cuerpo marrón Cerámica sinterizada Análisis de resistividad de cerámica Suspensión acuosa de aglutinante Suspensión con partículas Advanced Ceramics Direct Ink Writing Additive Manufacturing Copper Oxide Cupric Oxide Binder Ceramics Green Body Brown Body Sintered Ceramic Resistivity Analysis of Ceramic Aqueous Binder Slurry Particle Laden Slurry Cerâmicas Avançadas Impressão Direta de Tinta Manufatura Aditiva Óxido de Cobre Óxido Cúprico Aglutinante Cerâmicas Corpo Verde Corpo Marrom Cerâmica Sinterizada Análise de Resistividade de Cerâmica Suspensão Aquosa de Aglutinante Suspensão com Partículas |
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| Español | |
| Universidad de Montevideo | |
| REDUM | |
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https://revistas.um.edu.uy/index.php/ingenieria/article/view/1966
https://hdl.handle.net/20.500.12806/3440 |
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| Acceso abierto | |
| Atribución 4.0 Internacional |
| Sumario: | The DIW approach offers numerous benefits, including expedited prototyping, cost-effectiveness, reduced waste in manufacturing, and enhanced design flexibility. It's currently a popular production method for building materials and has great potential for porous and electronic materials. In this study, porous cupric oxide (CuO) ceramics were fabricated using a direct ink writing (DIW) approach based on a copper particle–laden aqueous precursor. The ink formulation was optimized to achieve stable extrusion and crack-free green bodies, yielding a final composition of 68.0 wt% Cu, 31.3 wt% water, and 0.6 wt% CMC. Following oxidation and sintering in air, the printed structures exhibited a bulk density of 3.60 ± 0.20 g cm⁻³ and a corresponding theoretical porosity of 43.7 ± 0.9%. X-ray diffraction confirmed nearly phase-pure monoclinic CuO with no detectable Cu or Cu₂O residues. The printed components exhibited an interconnected, porous microstructure and a four-point-probe resistivity of 10.5 ± 0.3 Ω·m at 25 °C, reflecting the influence of high porosity on charge transport. The DIW route demonstrated here provides a controllable pathway for producing porous CuO architectures with tunable microstructure and moderate electrical conductivity. These characteristics suggest potential applicability in gas filtration, catalytic supports, and electrochemical sensing; however, device-level validation is still required to fully assess functional performance. |
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