An asymmetrical bulk-modified composite MOS transistor with enhanced linearity

Arnaud Maceira, Alfredo - Chacón Rodríguez, Alfonso - Miguez de Mori, Matías Rafael - Gak Szollosy, Joel - Puyol, Rafael

Resumen:

In this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ and 200MΩ equivalent resistors simulations, with a linear range up to 1.5V. A low frequency, 40dB gain, fully integrated cardiac sensing channel filter/amplifier is also shown. Taking advantage of the proposed technique, the circuit consumes only 25nA of supply current.


Detalles Bibliográficos
2019
Agencia Nacional de Investigación e Innovación
Analog integrated circuits
CMOS
Linearization techniques
Analog filters
MOS resistor
Inglés
Universidad Católica del Uruguay
LIBERI
https://hdl.handle.net/10895/1552
Acceso abierto
Licencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC BY-NC-ND 4.0)
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author Arnaud Maceira, Alfredo
author2 Chacón Rodríguez, Alfonso
Miguez de Mori, Matías Rafael
Gak Szollosy, Joel
Puyol, Rafael
author2_role author
author
author
author
author_facet Arnaud Maceira, Alfredo
Chacón Rodríguez, Alfonso
Miguez de Mori, Matías Rafael
Gak Szollosy, Joel
Puyol, Rafael
author_role author
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collection LIBERI
dc.creator.none.fl_str_mv Arnaud Maceira, Alfredo
Chacón Rodríguez, Alfonso
Miguez de Mori, Matías Rafael
Gak Szollosy, Joel
Puyol, Rafael
dc.date.accessioned.none.fl_str_mv 2021-10-21T20:52:17Z
dc.date.available.none.fl_str_mv 2021-10-21T20:52:17Z
dc.date.issued.none.fl_str_mv 2019
dc.description.abstract.none.fl_txt_mv In this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ and 200MΩ equivalent resistors simulations, with a linear range up to 1.5V. A low frequency, 40dB gain, fully integrated cardiac sensing channel filter/amplifier is also shown. Taking advantage of the proposed technique, the circuit consumes only 25nA of supply current.
dc.description.sponsorship.none.fl_txt_mv Agencia Nacional de Investigación e Innovación
dc.format.mimetype.none.fl_str_mv application/pdf
dc.identifier.uri.none.fl_str_mv https://hdl.handle.net/10895/1552
dc.language.iso.none.fl_str_mv eng
dc.publisher.es.fl_str_mv IEEE
dc.relation.ispartof.none.fl_str_mv 10th IEEE Latin American Symposium on Circuits & Systems (LASCAS), 2019.
dc.rights.license.none.fl_str_mv Licencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC BY-NC-ND 4.0)
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
dc.source.none.fl_str_mv reponame:LIBERI
instname:Universidad Católica del Uruguay
instacron:Universidad Católica del Uruguay
dc.subject.es.fl_str_mv Analog integrated circuits
CMOS
Linearization techniques
Analog filters
MOS resistor
dc.title.none.fl_str_mv An asymmetrical bulk-modified composite MOS transistor with enhanced linearity
dc.type.es.fl_str_mv Artículo
dc.type.none.fl_str_mv info:eu-repo/semantics/article
dc.type.version.none.fl_str_mv info:eu-repo/semantics/publishedVersion
description In this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ and 200MΩ equivalent resistors simulations, with a linear range up to 1.5V. A low frequency, 40dB gain, fully integrated cardiac sensing channel filter/amplifier is also shown. Taking advantage of the proposed technique, the circuit consumes only 25nA of supply current.
eu_rights_str_mv openAccess
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instacron_str Universidad Católica del Uruguay
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language eng
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oai_identifier_str oai:liberi.ucu.edu.uy:10895/1552
publishDate 2019
reponame_str LIBERI
repository.mail.fl_str_mv franco.pertusso@ucu.edu.uy
repository.name.fl_str_mv LIBERI - Universidad Católica del Uruguay
repository_id_str 10342
rights_invalid_str_mv Licencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC BY-NC-ND 4.0)
spelling Licencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC BY-NC-ND 4.0)info:eu-repo/semantics/openAccess2021-10-21T20:52:17Z2021-10-21T20:52:17Z2019https://hdl.handle.net/10895/1552In this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ and 200MΩ equivalent resistors simulations, with a linear range up to 1.5V. A low frequency, 40dB gain, fully integrated cardiac sensing channel filter/amplifier is also shown. Taking advantage of the proposed technique, the circuit consumes only 25nA of supply current.Agencia Nacional de Investigación e Innovaciónapplication/pdfIEEE10th IEEE Latin American Symposium on Circuits & Systems (LASCAS), 2019.Analog integrated circuitsCMOSLinearization techniquesAnalog filtersMOS resistorAn asymmetrical bulk-modified composite MOS transistor with enhanced linearityArtículoinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionreponame:LIBERIinstname:Universidad Católica del Uruguayinstacron:Universidad Católica del UruguayArnaud Maceira, AlfredoChacón Rodríguez, AlfonsoMiguez de Mori, Matías RafaelGak Szollosy, JoelPuyol, RafaelengORIGINALAn_asymmetrical_bulk-modified_composite_MOS_transistor_with_enhanced_linearity.pdfAn_asymmetrical_bulk-modified_composite_MOS_transistor_with_enhanced_linearity.pdfapplication/pdf1680906http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1552/1/An_asymmetrical_bulk-modified_composite_MOS_transistor_with_enhanced_linearity.pdfb7d6f010e7c02f87d61418498cd227b3MD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81748http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1552/2/license.txt8a4605be74aa9ea9d79846c1fba20a33MD52TEXTAn_asymmetrical_bulk-modified_composite_MOS_transistor_with_enhanced_linearity.pdf.txtAn_asymmetrical_bulk-modified_composite_MOS_transistor_with_enhanced_linearity.pdf.txtExtracted texttext/plain17800http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1552/3/An_asymmetrical_bulk-modified_composite_MOS_transistor_with_enhanced_linearity.pdf.txt98682cd46047c8715b25716a5084e650MD53THUMBNAILAn_asymmetrical_bulk-modified_composite_MOS_transistor_with_enhanced_linearity.pdf.jpgAn_asymmetrical_bulk-modified_composite_MOS_transistor_with_enhanced_linearity.pdf.jpgGenerated Thumbnailimage/jpeg7633http://liberi.ucu.edu.uy/xmlui/bitstream/10895/1552/4/An_asymmetrical_bulk-modified_composite_MOS_transistor_with_enhanced_linearity.pdf.jpg7c98af74c4d3077dc6229a153920c341MD5410895/15522021-11-10 18:04:43.452oai:liberi.ucu.edu.uy:10895/1552Tk9URTogUExBQ0UgWU9VUiBPV04gTElDRU5TRSBIRVJFClRoaXMgc2FtcGxlIGxpY2Vuc2UgaXMgcHJvdmlkZWQgZm9yIGluZm9ybWF0aW9uYWwgcHVycG9zZXMgb25seS4KCk5PTi1FWENMVVNJVkUgRElTVFJJQlVUSU9OIExJQ0VOU0UKCkJ5IHNpZ25pbmcgYW5kIHN1Ym1pdHRpbmcgdGhpcyBsaWNlbnNlLCB5b3UgKHRoZSBhdXRob3Iocykgb3IgY29weXJpZ2h0Cm93bmVyKSBncmFudHMgdG8gRFNwYWNlIFVuaXZlcnNpdHkgKERTVSkgdGhlIG5vbi1leGNsdXNpdmUgcmlnaHQgdG8gcmVwcm9kdWNlLAp0cmFuc2xhdGUgKGFzIGRlZmluZWQgYmVsb3cpLCBhbmQvb3IgZGlzdHJpYnV0ZSB5b3VyIHN1Ym1pc3Npb24gKGluY2x1ZGluZwp0aGUgYWJzdHJhY3QpIHdvcmxkd2lkZSBpbiBwcmludCBhbmQgZWxlY3Ryb25pYyBmb3JtYXQgYW5kIGluIGFueSBtZWRpdW0sCmluY2x1ZGluZyBidXQgbm90IGxpbWl0ZWQgdG8gYXVkaW8gb3IgdmlkZW8uCgpZb3UgYWdyZWUgdGhhdCBEU1UgbWF5LCB3aXRob3V0IGNoYW5naW5nIHRoZSBjb250ZW50LCB0cmFuc2xhdGUgdGhlCnN1Ym1pc3Npb24gdG8gYW55IG1lZGl1bSBvciBmb3JtYXQgZm9yIHRoZSBwdXJwb3NlIG9mIHByZXNlcnZhdGlvbi4KCllvdSBhbHNvIGFncmVlIHRoYXQgRFNVIG1heSBrZWVwIG1vcmUgdGhhbiBvbmUgY29weSBvZiB0aGlzIHN1Ym1pc3Npb24gZm9yCnB1cnBvc2VzIG9mIHNlY3VyaXR5LCBiYWNrLXVwIGFuZCBwcmVzZXJ2YXRpb24uCgpZb3UgcmVwcmVzZW50IHRoYXQgdGhlIHN1Ym1pc3Npb24gaXMgeW91ciBvcmlnaW5hbCB3b3JrLCBhbmQgdGhhdCB5b3UgaGF2ZQp0aGUgcmlnaHQgdG8gZ3JhbnQgdGhlIHJpZ2h0cyBjb250YWluZWQgaW4gdGhpcyBsaWNlbnNlLiBZb3UgYWxzbyByZXByZXNlbnQKdGhhdCB5b3VyIHN1Ym1pc3Npb24gZG9lcyBub3QsIHRvIHRoZSBiZXN0IG9mIHlvdXIga25vd2xlZGdlLCBpbmZyaW5nZSB1cG9uCmFueW9uZSdzIGNvcHlyaWdodC4KCklmIHRoZSBzdWJtaXNzaW9uIGNvbnRhaW5zIG1hdGVyaWFsIGZvciB3aGljaCB5b3UgZG8gbm90IGhvbGQgY29weXJpZ2h0LAp5b3UgcmVwcmVzZW50IHRoYXQgeW91IGhhdmUgb2J0YWluZWQgdGhlIHVucmVzdHJpY3RlZCBwZXJtaXNzaW9uIG9mIHRoZQpjb3B5cmlnaHQgb3duZXIgdG8gZ3JhbnQgRFNVIHRoZSByaWdodHMgcmVxdWlyZWQgYnkgdGhpcyBsaWNlbnNlLCBhbmQgdGhhdApzdWNoIHRoaXJkLXBhcnR5IG93bmVkIG1hdGVyaWFsIGlzIGNsZWFybHkgaWRlbnRpZmllZCBhbmQgYWNrbm93bGVkZ2VkCndpdGhpbiB0aGUgdGV4dCBvciBjb250ZW50IG9mIHRoZSBzdWJtaXNzaW9uLgoKSUYgVEhFIFNVQk1JU1NJT04gSVMgQkFTRUQgVVBPTiBXT1JLIFRIQVQgSEFTIEJFRU4gU1BPTlNPUkVEIE9SIFNVUFBPUlRFRApCWSBBTiBBR0VOQ1kgT1IgT1JHQU5JWkFUSU9OIE9USEVSIFRIQU4gRFNVLCBZT1UgUkVQUkVTRU5UIFRIQVQgWU9VIEhBVkUKRlVMRklMTEVEIEFOWSBSSUdIVCBPRiBSRVZJRVcgT1IgT1RIRVIgT0JMSUdBVElPTlMgUkVRVUlSRUQgQlkgU1VDSApDT05UUkFDVCBPUiBBR1JFRU1FTlQuCgpEU1Ugd2lsbCBjbGVhcmx5IGlkZW50aWZ5IHlvdXIgbmFtZShzKSBhcyB0aGUgYXV0aG9yKHMpIG9yIG93bmVyKHMpIG9mIHRoZQpzdWJtaXNzaW9uLCBhbmQgd2lsbCBub3QgbWFrZSBhbnkgYWx0ZXJhdGlvbiwgb3RoZXIgdGhhbiBhcyBhbGxvd2VkIGJ5IHRoaXMKbGljZW5zZSwgdG8geW91ciBzdWJtaXNzaW9uLgo=Universidadhttps://www.ucu.edu.uy/https://liberi.ucu.edu.uy/oai/requestfranco.pertusso@ucu.edu.uyUruguayopendoar:103422021-11-10T21:04:43LIBERI - Universidad Católica del Uruguayfalse
spellingShingle An asymmetrical bulk-modified composite MOS transistor with enhanced linearity
Arnaud Maceira, Alfredo
Analog integrated circuits
CMOS
Linearization techniques
Analog filters
MOS resistor
status_str publishedVersion
title An asymmetrical bulk-modified composite MOS transistor with enhanced linearity
title_full An asymmetrical bulk-modified composite MOS transistor with enhanced linearity
title_fullStr An asymmetrical bulk-modified composite MOS transistor with enhanced linearity
title_full_unstemmed An asymmetrical bulk-modified composite MOS transistor with enhanced linearity
title_short An asymmetrical bulk-modified composite MOS transistor with enhanced linearity
title_sort An asymmetrical bulk-modified composite MOS transistor with enhanced linearity
topic Analog integrated circuits
CMOS
Linearization techniques
Analog filters
MOS resistor
url https://hdl.handle.net/10895/1552