Simple noise formulas for MOS analog design
Resumen:
The designer needs simple and accurate models to estimate noise in MOS transistors as a function of their size, bias point and technology. In this work, we present a simple, continuous, physics-based model for flicker noise. We review also thermal noise and we examine the behavior of the corner frequency (f/sub c/) in terms of the bias point. The expressions that are presented are simple and valid in all the operating regions, from weak to strong inversion, constituting a useful set of equations for low noise analog design. Finally we examine the design of two low noise circuit elements, fabricated in a 0.8/spl mu/m technology.
| 2003 | |
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MOSFET Thermal noise Flicker noise Semiconductor device models Semiconductor device noise ELECTRÓNICA |
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| Inglés | |
| Universidad de la República | |
| COLIBRI | |
| https://hdl.handle.net/20.500.12008/21238 | |
| Acceso abierto | |
| Licencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC - By-NC-ND) |
| Sumario: | The designer needs simple and accurate models to estimate noise in MOS transistors as a function of their size, bias point and technology. In this work, we present a simple, continuous, physics-based model for flicker noise. We review also thermal noise and we examine the behavior of the corner frequency (f/sub c/) in terms of the bias point. The expressions that are presented are simple and valid in all the operating regions, from weak to strong inversion, constituting a useful set of equations for low noise analog design. Finally we examine the design of two low noise circuit elements, fabricated in a 0.8/spl mu/m technology. |
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