Ultra-low power temperature sensor
Resumen:
We propose an architecture and circuit for temperature sensors integrated within systems on a chip. The circuit is based on special properties of devices when biased by a current with a particular dependence with temperature. We present results from a test circuit fabricated on a standard 0:8 ¹m CMOS technology which draws under 40 nA from a 1.6 V to 3.0 V supply at room temperature. Measurements show that the circuit is suitable for temperature sensing with a ±0.5 K uncertainty in the 290 K to 350 K range.
| 2006 | |
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Temperature sensor Microelectronics Low power Electrónica |
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| Inglés | |
| Universidad de la República | |
| COLIBRI | |
| https://hdl.handle.net/20.500.12008/38598 | |
| Acceso abierto | |
| Licencia Creative Commons Atribución - No Comercial - Sin Derivadas (CC - By-NC-ND 4.0) |
