Characterization of MOS Transistor Current Mismatch
Resumen:
Electron device matching has been a key factor on the performance of today’s analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. CMOS test structures were designed and fabricated as a way to develop an extensive experimental work, where current mismatch was measured under a wide range of bias conditions. A model for MOS transistor mismatch was also developed, using the carrier number fluctuation theory to account for the effects of local doping fluctuations. This model shows a good fitting with measurements over a wide range of operation conditions, from weak to strong inversion, from linear to saturation region, and allows the assessment of mismatch from process and geometric parameters.
| 2004 | |
|
MOSFET Analog design Matching Mismatch Compact models |
|
| Inglés | |
| Universidad de la República | |
| COLIBRI | |
| https://hdl.handle.net/20.500.12008/21287 | |
| Acceso abierto |
| _version_ | 1807522895375630336 |
|---|---|
| author | Klimach, H |
| author2 | Arnaud, Alfredo Schneider, M. C Galup Montoro, Carlos |
| author2_role | author author author |
| author_facet | Klimach, H Arnaud, Alfredo Schneider, M. C Galup Montoro, Carlos |
| author_role | author |
| bitstream.checksum.fl_str_mv | 6429389a7df7277b72b7924fdc7d47a9 d41d8cd98f00b204e9800998ecf8427e 4afdbb8c545fd630ea7db775da747b2f d41d8cd98f00b204e9800998ecf8427e |
| bitstream.checksumAlgorithm.fl_str_mv | MD5 MD5 MD5 MD5 |
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| collection | COLIBRI |
| dc.creator.none.fl_str_mv | Klimach, H Arnaud, Alfredo Schneider, M. C Galup Montoro, Carlos |
| dc.date.accessioned.none.fl_str_mv | 2019-07-03T16:36:21Z |
| dc.date.available.none.fl_str_mv | 2019-07-03T16:36:21Z |
| dc.date.issued.es.fl_str_mv | 2004 |
| dc.date.submitted.es.fl_str_mv | 20190703 |
| dc.description.abstract.none.fl_txt_mv | Electron device matching has been a key factor on the performance of today’s analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. CMOS test structures were designed and fabricated as a way to develop an extensive experimental work, where current mismatch was measured under a wide range of bias conditions. A model for MOS transistor mismatch was also developed, using the carrier number fluctuation theory to account for the effects of local doping fluctuations. This model shows a good fitting with measurements over a wide range of operation conditions, from weak to strong inversion, from linear to saturation region, and allows the assessment of mismatch from process and geometric parameters. |
| dc.identifier.citation.es.fl_str_mv | Klimach, H., Arnaud, A., Schneider, M. C., Galup Montoro, C. Characterization of MOS Transistor Current Mismatch. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design, Porto de Galinhas, Brasil, 2004 |
| dc.identifier.uri.none.fl_str_mv | https://hdl.handle.net/20.500.12008/21287 |
| dc.language.iso.none.fl_str_mv | en eng |
| dc.publisher.es.fl_str_mv | ACM |
| dc.rights.none.fl_str_mv | info:eu-repo/semantics/openAccess |
| dc.source.none.fl_str_mv | reponame:COLIBRI instname:Universidad de la República instacron:Universidad de la República |
| dc.subject.es.fl_str_mv | MOSFET Analog design Matching Mismatch Compact models |
| dc.title.none.fl_str_mv | Characterization of MOS Transistor Current Mismatch |
| dc.type.es.fl_str_mv | Artículo |
| dc.type.none.fl_str_mv | info:eu-repo/semantics/article |
| dc.type.version.none.fl_str_mv | info:eu-repo/semantics/publishedVersion |
| description | Electron device matching has been a key factor on the performance of today’s analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. CMOS test structures were designed and fabricated as a way to develop an extensive experimental work, where current mismatch was measured under a wide range of bias conditions. A model for MOS transistor mismatch was also developed, using the carrier number fluctuation theory to account for the effects of local doping fluctuations. This model shows a good fitting with measurements over a wide range of operation conditions, from weak to strong inversion, from linear to saturation region, and allows the assessment of mismatch from process and geometric parameters. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | COLIBRI_5b5016f7963c419694e5cec47c9f822f |
| identifier_str_mv | Klimach, H., Arnaud, A., Schneider, M. C., Galup Montoro, C. Characterization of MOS Transistor Current Mismatch. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design, Porto de Galinhas, Brasil, 2004 |
| instacron_str | Universidad de la República |
| institution | Universidad de la República |
| instname_str | Universidad de la República |
| language | eng |
| language_invalid_str_mv | en |
| network_acronym_str | COLIBRI |
| network_name_str | COLIBRI |
| oai_identifier_str | oai:colibri.udelar.edu.uy:20.500.12008/21287 |
| publishDate | 2004 |
| reponame_str | COLIBRI |
| repository.mail.fl_str_mv | mabel.seroubian@seciu.edu.uy |
| repository.name.fl_str_mv | COLIBRI - Universidad de la República |
| repository_id_str | 4771 |
| spelling | 2019-07-03T16:36:21Z2019-07-03T16:36:21Z200420190703Klimach, H., Arnaud, A., Schneider, M. C., Galup Montoro, C. Characterization of MOS Transistor Current Mismatch. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design, Porto de Galinhas, Brasil, 2004https://hdl.handle.net/20.500.12008/21287Electron device matching has been a key factor on the performance of today’s analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. CMOS test structures were designed and fabricated as a way to develop an extensive experimental work, where current mismatch was measured under a wide range of bias conditions. A model for MOS transistor mismatch was also developed, using the carrier number fluctuation theory to account for the effects of local doping fluctuations. This model shows a good fitting with measurements over a wide range of operation conditions, from weak to strong inversion, from linear to saturation region, and allows the assessment of mismatch from process and geometric parameters.Made available in DSpace on 2019-07-03T16:36:21Z (GMT). No. of bitstreams: 4 license_text: 0 bytes, checksum: d41d8cd98f00b204e9800998ecf8427e (MD5) license_url: 49 bytes, checksum: 4afdbb8c545fd630ea7db775da747b2f (MD5) license_rdf: 0 bytes, checksum: d41d8cd98f00b204e9800998ecf8427e (MD5) license.txt: 4267 bytes, checksum: 6429389a7df7277b72b7924fdc7d47a9 (MD5) Previous issue date: 2004enengACMLas obras depositadas en el Repositorio se rigen por la Ordenanza de los Derechos de la Propiedad Intelectual de la Universidad De La República. (Res. Nº 91 de C.D.C. de 8/III/1994 – D.O. 7/IV/1994) y por la Ordenanza del Repositorio Abierto de la Universidad de la República (Res. Nº 16 de C.D.C. de 07/10/2014)info:eu-repo/semantics/openAccessMOSFETAnalog designMatchingMismatchCompact modelsCharacterization of MOS Transistor Current MismatchArtículoinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionreponame:COLIBRIinstname:Universidad de la Repúblicainstacron:Universidad de la RepúblicaKlimach, HArnaud, AlfredoSchneider, M. CGalup Montoro, CarlosLICENSElicense.txttext/plain4267http://localhost:8080/xmlui/bitstream/20.500.12008/21287/4/license.txt6429389a7df7277b72b7924fdc7d47a9MD54CC-LICENSElicense_textapplication/octet-stream0http://localhost:8080/xmlui/bitstream/20.500.12008/21287/1/license_textd41d8cd98f00b204e9800998ecf8427eMD51license_urlapplication/octet-stream49http://localhost:8080/xmlui/bitstream/20.500.12008/21287/2/license_url4afdbb8c545fd630ea7db775da747b2fMD52license_rdfapplication/octet-stream0http://localhost:8080/xmlui/bitstream/20.500.12008/21287/3/license_rdfd41d8cd98f00b204e9800998ecf8427eMD5320.500.12008/212872019-10-31 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- Universidad de la Repúblicafalse |
| spellingShingle | Characterization of MOS Transistor Current Mismatch Klimach, H MOSFET Analog design Matching Mismatch Compact models |
| status_str | publishedVersion |
| title | Characterization of MOS Transistor Current Mismatch |
| title_full | Characterization of MOS Transistor Current Mismatch |
| title_fullStr | Characterization of MOS Transistor Current Mismatch |
| title_full_unstemmed | Characterization of MOS Transistor Current Mismatch |
| title_short | Characterization of MOS Transistor Current Mismatch |
| title_sort | Characterization of MOS Transistor Current Mismatch |
| topic | MOSFET Analog design Matching Mismatch Compact models |
| url | https://hdl.handle.net/20.500.12008/21287 |
