Characterization of MOS Transistor Current Mismatch
Resumen:
Electron device matching has been a key factor on the performance of today’s analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. CMOS test structures were designed and fabricated as a way to develop an extensive experimental work, where current mismatch was measured under a wide range of bias conditions. A model for MOS transistor mismatch was also developed, using the carrier number fluctuation theory to account for the effects of local doping fluctuations. This model shows a good fitting with measurements over a wide range of operation conditions, from weak to strong inversion, from linear to saturation region, and allows the assessment of mismatch from process and geometric parameters.
| 2004 | |
|
MOSFET Analog design Matching Mismatch Compact models |
|
| Inglés | |
| Universidad de la República | |
| COLIBRI | |
| https://hdl.handle.net/20.500.12008/21287 | |
| Acceso abierto |
| Sumario: | Electron device matching has been a key factor on the performance of today’s analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. CMOS test structures were designed and fabricated as a way to develop an extensive experimental work, where current mismatch was measured under a wide range of bias conditions. A model for MOS transistor mismatch was also developed, using the carrier number fluctuation theory to account for the effects of local doping fluctuations. This model shows a good fitting with measurements over a wide range of operation conditions, from weak to strong inversion, from linear to saturation region, and allows the assessment of mismatch from process and geometric parameters. |
|---|
